onsemi, IGBT, 1.9 A 8-Pin 20V, SOIC
- N° de stock RS:
- 221-6601
- Référence fabricant:
- NCD57201DR2G
- Fabricant:
- onsemi
Sous-total (1 bobine de 2500 unités)*
1 402,50 €
(TVA exclue)
1 697,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 03 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,561 € | 1 402,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 221-6601
- Référence fabricant:
- NCD57201DR2G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 8ns | |
| Driver Type | IGBT | |
| Number of Outputs | 2 | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Height | 1.75mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 8ns | ||
Driver Type IGBT | ||
Number of Outputs 2 | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Height 1.75mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanic ally isolated high or low side gate driver. It ca directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply.
Low output voltage drop for enhanced IGBT conduction
Floating channel for bootstrap operation up to +800 V
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V