STMicroelectronics VNB14NV04TR-E MOSFET Gate Driver 1, 20 A 2-Pin 40V, TO-263
- N° de stock RS:
- 190-6854P
- Référence fabricant:
- VNB14NV04TR-E
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total 50 unités (conditionné en bande continue)*
102,50 €
(TVA exclue)
124,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 7 970 unité(s) expédiée(s) à partir du 28 juillet 2026
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Unité | Prix par unité |
|---|---|
| 50 - 120 | 2,05 € |
| 125 + | 1,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 190-6854P
- Référence fabricant:
- VNB14NV04TR-E
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | General Purpose Driver | |
| Output Current | 20A | |
| Pin Count | 2 | |
| Fall Time | 30μs | |
| Package Type | TO-263 | |
| Driver Type | MOSFET | |
| Rise Time | 30μs | |
| Minimum Supply Voltage | 40V | |
| Maximum Supply Voltage | 40V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type General Purpose Driver | ||
Output Current 20A | ||
Pin Count 2 | ||
Fall Time 30μs | ||
Package Type TO-263 | ||
Driver Type MOSFET | ||
Rise Time 30μs | ||
Minimum Supply Voltage 40V | ||
Maximum Supply Voltage 40V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics VNB10N07 are monolithic device made using VI Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. It built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
ESD protection
Direct Access to the gate of the power MOSFET
Linear current limitation
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