STMicroelectronics MOSFET Gate Driver 1, 20 A 2-Pin 40 V, TO-263
- N° de stock RS:
- 190-4940
- Référence fabricant:
- VNB14NV04TR-E
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
1 356,00 €
(TVA exclue)
1 641,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 7 000 unité(s) expédiée(s) à partir du 17 décembre 2025
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,356 € | 1 356,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 190-4940
- Référence fabricant:
- VNB14NV04TR-E
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | General Purpose Driver | |
| Output Current | 20A | |
| Pin Count | 2 | |
| Fall Time | 30μs | |
| Package Type | TO-263 | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Rise Time | 30μs | |
| Minimum Supply Voltage | 40V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 40V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.6mm | |
| Width | 9.35 mm | |
| Length | 10.4mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type General Purpose Driver | ||
Output Current 20A | ||
Pin Count 2 | ||
Fall Time 30μs | ||
Package Type TO-263 | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Rise Time 30μs | ||
Minimum Supply Voltage 40V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 40V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.6mm | ||
Width 9.35 mm | ||
Length 10.4mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The STMicroelectronics VNB10N07 are monolithic device made using VI Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. It built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
ESD protection
Direct Access to the gate of the power MOSFET
Linear current limitation
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