STMicroelectronics STDRIVEG212QTR, Gate Driver 2, 1.8 A 18-Pin 20V, QFN
- N° de stock RS:
- 734-274
- Référence fabricant:
- STDRIVEG212QTR
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,68 €
(TVA exclue)
3,24 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 300 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,68 € |
| 10 - 24 | 2,03 € |
| 25 - 99 | 1,86 € |
| 100 - 249 | 1,67 € |
| 250 + | 1,57 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 734-274
- Référence fabricant:
- STDRIVEG212QTR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Gate Driver | |
| Output Current | 1.8A | |
| Pin Count | 18 | |
| Fall Time | 13ns | |
| Package Type | QFN | |
| Driver Type | Gate Driver | |
| Rise Time | 22ns | |
| Minimum Supply Voltage | 3.3V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | STDR | |
| Length | 5mm | |
| Height | 1mm | |
| Standards/Approvals | RoHs Compliant | |
| Width | 4mm | |
| Mount Type | Surface | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Gate Driver | ||
Output Current 1.8A | ||
Pin Count 18 | ||
Fall Time 13ns | ||
Package Type QFN | ||
Driver Type Gate Driver | ||
Rise Time 22ns | ||
Minimum Supply Voltage 3.3V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series STDR | ||
Length 5mm | ||
Height 1mm | ||
Standards/Approvals RoHs Compliant | ||
Width 4mm | ||
Mount Type Surface | ||
- Pays d'origine :
- SG
The STMicroelectronics high‑speed half‑bridge gate driver is optimised for driving enhanced‑mode GaN HEMTs with a 5 V gate voltage. It features a robust high‑side driver section capable of supporting voltage rails up to 220 V, supplied through an integrated bootstrap. With ultra‑fast startup, low propagation delay, and Advanced protection mechanisms, it is designed for reliable and efficient operation in high‑frequency power conversion applications.
Separate sink and source paths with 1.8 A sink and 0.8 A source capability
High side and low side linear regulators providing 5 V gate driving voltage
Propagation delay of 50 ns with minimum output Pulse of 15 ns
Comparator for overcurrent detection with Smart Shutdown and fault reporting functions
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