Infineon 6EDL04I065NRXUMA1 High Side Gate Driver 6, 165 mA 25-Pin 17.5 V, PG-TSSOP-25
- N° de stock RS:
- 351-974
- Référence fabricant:
- 6EDL04I065NRXUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
9,77 €
(TVA exclue)
11,82 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 000 unité(s) expédiée(s) à partir du 05 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,954 € | 9,77 € |
| 50 - 95 | 1,856 € | 9,28 € |
| 100 + | 1,718 € | 8,59 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-974
- Référence fabricant:
- 6EDL04I065NRXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 165mA | |
| Pin Count | 25 | |
| Fall Time | 26ns | |
| Package Type | PG-TSSOP-25 | |
| Driver Type | High Side | |
| Rise Time | 100ns | |
| Minimum Supply Voltage | 13V | |
| Number of Drivers | 6 | |
| Maximum Supply Voltage | 17.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | 6EDL04 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Gate Driver Module | ||
Output Current 165mA | ||
Pin Count 25 | ||
Fall Time 26ns | ||
Package Type PG-TSSOP-25 | ||
Driver Type High Side | ||
Rise Time 100ns | ||
Minimum Supply Voltage 13V | ||
Number of Drivers 6 | ||
Maximum Supply Voltage 17.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series 6EDL04 | ||
Automotive Standard No | ||
The Infineon Three-phase gate driver 3rd generation is a full bridge driver to control power devices like IGBTs in 3-phase systems with a maximum blocking voltage. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions
Smallest footprint package solution
Higher efficiency
Increased reliability
Higher breakdown voltage
Easy of design
Liens connexes
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