MPS MPQ1918GQE-AEC1-P, High and Low Side 1, 5 A, 5.5V 14-Pin, FCQFN-14
- N° de stock RS:
- 337-871
- Référence fabricant:
- MPQ1918GQE-AEC1-P
- Fabricant:
- MPS
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 337-871
- Référence fabricant:
- MPQ1918GQE-AEC1-P
- Fabricant:
- MPS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | MPS | |
| Logic Type | TTL | |
| Output Current | 5 A | |
| Supply Voltage | 5.5V | |
| Pin Count | 14 | |
| Fall Time | 3ns | |
| Package Type | FCQFN-14 | |
| Driver Type | High and Low Side | |
| Number of Drivers | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque MPS | ||
Logic Type TTL | ||
Output Current 5 A | ||
Supply Voltage 5.5V | ||
Pin Count 14 | ||
Fall Time 3ns | ||
Package Type FCQFN-14 | ||
Driver Type High and Low Side | ||
Number of Drivers 1 | ||
- Pays d'origine :
- CN
The MPS International Ltd 100V High Frequency Half Bridge GaN/MOSFET Driver is designed to drive enhancement mode Gallium Nitride FETs or N channel MOSFETs with a low gate threshold voltage in a half bridge or synchronous application. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage, which prevents the gate voltage from exceeding the GaN FET’s maximum gate to source voltage rating.
Internal bootstrap switch supply voltage clamping
3.7V to 5.5V VCC voltage range
Fast propagation times
Excellent propagation delay matching