STMicroelectronics L6388ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17V, SO-8
- N° de stock RS:
- 152-017P
- Référence fabricant:
- L6388ED013TR
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total 50 unités (conditionné en bande continue)*
62,60 €
(TVA exclue)
75,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 865 unité(s) expédiée(s) à partir du 20 juillet 2026
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Unité | Prix par unité |
|---|---|
| 50 - 245 | 1,252 € |
| 250 - 495 | 1,222 € |
| 500 + | 1,144 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-017P
- Référence fabricant:
- L6388ED013TR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Fall Time | 40ns | |
| Package Type | SO-8 | |
| Driver Type | High Side | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 17V | |
| Minimum Operating Temperature | -45°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | L6388ED013TR | |
| Mount Type | Surface | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Fall Time 40ns | ||
Package Type SO-8 | ||
Driver Type High Side | ||
Rise Time 70ns | ||
Minimum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 17V | ||
Minimum Operating Temperature -45°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series L6388ED013TR | ||
Mount Type Surface | ||
- Pays d'origine :
- CN
The STMicroelectronics high voltage gate driver, manufactured with the BCD offline technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the dead time function.
Internal bootstrap diode
Outputs in phase with inputs
Dead time and interlocking function
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