Cypress Semiconductor 128kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24V01-G
- N° de stock RS:
- 828-2780P
- Référence fabricant:
- FM24V01-G
- Fabricant:
- Cypress Semiconductor
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 828-2780P
- Référence fabricant:
- FM24V01-G
- Fabricant:
- Cypress Semiconductor
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Cypress Semiconductor | |
| Memory Size | 128kbit | |
| Organisation | 16 x 8 bit | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.978 x 3.987 x 1.478mm | |
| Length | 4.98mm | |
| Width | 3.987mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 1.478mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 16 | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 2 V | |
| Sélectionner tout | ||
|---|---|---|
Marque Cypress Semiconductor | ||
Memory Size 128kbit | ||
Organisation 16 x 8 bit | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.978 x 3.987 x 1.478mm | ||
Length 4.98mm | ||
Width 3.987mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1.478mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 16 | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 2 V | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.