Infineon 2 MB Serial-SPI FRAM 8-Pin SOIC-8, CY15B102QN-50SXE
- N° de stock RS:
- 273-7316
- Référence fabricant:
- CY15B102QN-50SXE
- Fabricant:
- Infineon
Sous-total (1 tube de 94 unités)*
987,00 €
(TVA exclue)
1 193,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 26 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 94 + | 10,50 € | 987,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7316
- Référence fabricant:
- CY15B102QN-50SXE
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | FRAM | |
| Memory Size | 2MB | |
| Organisation | 256K x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 50MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS Compliant | |
| Maximum Operating Temperature | 125°C | |
| Minimum Supply Voltage | 1.71V | |
| Number of Words | 256K | |
| Automotive Standard | AEC-Q100 Grade 1 | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type FRAM | ||
Memory Size 2MB | ||
Organisation 256K x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 50MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS Compliant | ||
Maximum Operating Temperature 125°C | ||
Minimum Supply Voltage 1.71V | ||
Number of Words 256K | ||
Automotive Standard AEC-Q100 Grade 1 | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
The Infineon FRAM is an automotive grade, 2Mb non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non volatile memories.
RoHS compliant
Low voltage operation
Low power consumption
AEC Q100 Grade 1 compliant
Sophisticated write protection scheme
Software protection using write disable instruction
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