Infineon 4 MB Serial-SPI FRAM 8-Pin SOIC-8, CY15B104QN-50SXA
- N° de stock RS:
- 273-5263
- Référence fabricant:
- CY15B104QN-50SXA
- Fabricant:
- Infineon
Sous-total (1 tube de 94 unités)*
1 980,956 €
(TVA exclue)
2 397,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 80,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 94 + | 21,074 € | 1 980,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5263
- Référence fabricant:
- CY15B104QN-50SXA
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 4MB | |
| Product Type | FRAM | |
| Organisation | 512k x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 50MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 1.71V | |
| Number of Words | 524288 | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 Grade 3 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 4MB | ||
Product Type FRAM | ||
Organisation 512k x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 50MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 1.71V | ||
Number of Words 524288 | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 Grade 3 | ||
The Infineon FRAM Memory is a high performance, 4 Mbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash and other non volatile memories.
RoHS compliant
Low voltage operation
Software block protection
Serial bus interface SPI protocols
Low power consumption at high speed
Single and multi IO serial peripheral interface
Liens connexes
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