Infineon 2 MB SPI FRAM 8-Pin SOIC

Voir l’ensemble des FRAM Memory
Offre groupée disponible

Sous-total (1 tube de 94 unités)*

1 331,698 €

(TVA exclue)

1 611,348 €

(TVA incluse)

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  • 94 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le tube*
94 - 9414,167 €1 331,70 €
188 +13,813 €1 298,42 €

*Prix donné à titre indicatif

N° de stock RS:
188-5423
Référence fabricant:
FM25V20A-G
Fabricant:
Infineon
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Marque

Infineon

Memory Size

2MB

Product Type

FRAM

Organisation

256k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Maximum Clock Frequency

40MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Standards/Approvals

No

Width

3.98 mm

Length

4.97mm

Height

1.38mm

Maximum Operating Temperature

85°C

Number of Bits per Word

8

Minimum Supply Voltage

2V

Number of Words

256K

Minimum Operating Temperature

-40°C

Maximum Supply Voltage

3.6V

Automotive Standard

AEC-Q100

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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