Infineon 2 MB SPI FRAM 8-Pin SOIC

Voir l’ensemble des FRAM Memory
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
N° de stock RS:
188-5423
Référence fabricant:
FM25V20A-G
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Memory Size

2MB

Product Type

FRAM

Organisation

256k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Maximum Clock Frequency

40MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Height

1.38mm

Length

4.97mm

Width

3.98 mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Maximum Supply Voltage

3.6V

Number of Bits per Word

8

Number of Words

256K

Minimum Supply Voltage

2V

Automotive Standard

AEC-Q100

Minimum Operating Temperature

-40°C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Liens connexes