Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC

Voir l’ensemble des FRAM Memory
Offre groupée disponible

Sous-total (1 tube de 97 unités)*

180,42 €

(TVA exclue)

218,25 €

(TVA incluse)

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Unité
Prix par unité
le tube*
97 - 971,86 €180,42 €
194 - 4851,67 €161,99 €
582 - 9701,598 €155,01 €
1067 +1,512 €146,66 €

*Prix donné à titre indicatif

N° de stock RS:
188-5402
Référence fabricant:
FM24CL64B-G
Fabricant:
Infineon
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Marque

Infineon

Product Type

FRAM

Memory Size

64kB

Organisation

8K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

550ns

Maximum Clock Frequency

1MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Length

4.97mm

Width

3.98 mm

Standards/Approvals

No

Height

1.38mm

Maximum Operating Temperature

85°C

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Maximum Supply Voltage

3.65V

Minimum Supply Voltage

2.7V

Number of Words

8K

Automotive Standard

AEC-Q100

Pays d'origine :
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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