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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Memory Size	4Mbit
	Organisation	512k x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	8
	Dimensions	5.33 x 5.33 x 1.78mm
	Length	5.33mm
	Maximum Operating Supply Voltage	3.6 V
	Width	5.33mm
	Height	1.78mm
	Maximum Operating Temperature	+85 °C
	Number of Bits per Word	8bit
	Number of Words	512k
	Minimum Operating Supply Voltage	2 V
	Minimum Operating Temperature	-40 °C

	Sélectionner tout
	Marque Infineon
	Memory Size 4Mbit
	Organisation 512k x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 8
	Dimensions 5.33 x 5.33 x 1.78mm
	Length 5.33mm
	Maximum Operating Supply Voltage 3.6 V
	Width 5.33mm
	Height 1.78mm
	Maximum Operating Temperature +85 °C
	Number of Bits per Word 8bit
	Number of Words 512k
	Minimum Operating Supply Voltage 2 V
	Minimum Operating Temperature -40 °C

Pays d'origine :: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (TDFN) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI

Frais de livraison offerts pour toute commande de plus de 75,00 €

FRAM, Cypress Semiconductor

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