Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
- N° de stock RS:
- 125-4228P
- Référence fabricant:
- FM25W256-G
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total 10 unités (conditionné en tube)*
59,00 €
(TVA exclue)
71,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 504 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 10 - 49 | 5,90 € |
| 50 - 99 | 5,76 € |
| 100 - 499 | 5,57 € |
| 500 + | 5,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 125-4228P
- Référence fabricant:
- FM25W256-G
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 32K | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 32K | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 2.7 V | ||
Automotive Standard AEC-Q100 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
250 μA active current at 1 MHz
15 μA (typ) standby current
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
250 μA active current at 1 MHz
15 μA (typ) standby current
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.