Infineon 4 kB SPI FRAM 8-Pin SOIC, FM25040B-G

Offre groupée disponible

Sous-total 15 unités (conditionné en tube)*

22,71 €

(TVA exclue)

27,48 €

(TVA incluse)

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Prix par unité
15 - 251,514 €
30 - 951,466 €
100 - 4951,39 €
500 +1,296 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
125-4218P
Référence fabricant:
FM25040B-G
Fabricant:
Infineon
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Marque

Infineon

Memory Size

4kB

Product Type

FRAM

Organisation

512 x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Mount Type

Surface

Maximum Clock Frequency

20MHz

Package Type

SOIC

Pin Count

8

Width

3.98 mm

Height

1.38mm

Standards/Approvals

No

Length

4.97mm

Maximum Operating Temperature

85°C

Maximum Supply Voltage

5.5V

Minimum Supply Voltage

4.5V

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Number of Words

512

Minimum Operating Temperature

-40°C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.