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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Memory Size	256kbit
	Organisation	32K x 8 bit
	Interface Type	Parallel
	Data Bus Width	8bit
	Maximum Random Access Time	70ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	28
	Dimensions	18.11 x 7.62 x 2.37mm
	Length	18.11mm
	Width	7.62mm
	Maximum Operating Supply Voltage	5.5 V
	Height	2.37mm
	Maximum Operating Temperature	+85 °C
	Minimum Operating Temperature	-40 °C
	Number of Words	32K
	Number of Bits per Word	8bit
	Automotive Standard	AEC-Q100
	Minimum Operating Supply Voltage	2.7 V

	Sélectionner tout
	Marque Infineon
	Memory Size 256kbit
	Organisation 32K x 8 bit
	Interface Type Parallel
	Data Bus Width 8bit
	Maximum Random Access Time 70ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 28
	Dimensions 18.11 x 7.62 x 2.37mm
	Length 18.11mm
	Width 7.62mm
	Maximum Operating Supply Voltage 5.5 V
	Height 2.37mm
	Maximum Operating Temperature +85 °C
	Minimum Operating Temperature -40 °C
	Number of Words 32K
	Number of Bits per Word 8bit
	Automotive Standard AEC-Q100
	Minimum Operating Supply Voltage 2.7 V

FM18W08-SG Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 32 K x 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 μA (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Unité	Prix par unité
10 - 49	9,62 €
50 - 99	9,36 €
100 - 499	9,13 €
500 +	8,89 €

Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM18W08-SG

Frais de livraison offerts pour toute commande de plus de 75,00 €

FRAM, Cypress Semiconductor