FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM)
Logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write-protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
2.5-mA active current at 40 MHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Unité	Prix par unité
10 - 18	5,825 €
20 - 98	5,675 €
100 - 498	5,525 €
500 +	5,39 €

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Memory Size	256kbit
	Organisation	32K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Mounting Type	Surface Mount
	Package Type	DFN
	Pin Count	8
	Dimensions	4 x 4.5 x 0.7mm
	Length	4.5mm
	Width	4mm
	Maximum Operating Supply Voltage	3.6 V
	Height	0.7mm
	Maximum Operating Temperature	+85 °C
	Minimum Operating Temperature	-40 °C
	Minimum Operating Supply Voltage	2 V
	Number of Words	32K
	Number of Bits per Word	8bit

	Sélectionner tout
	Marque Infineon
	Memory Size 256kbit
	Organisation 32K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Mounting Type Surface Mount
	Package Type DFN
	Pin Count 8
	Dimensions 4 x 4.5 x 0.7mm
	Length 4.5mm
	Width 4mm
	Maximum Operating Supply Voltage 3.6 V
	Height 0.7mm
	Maximum Operating Temperature +85 °C
	Minimum Operating Temperature -40 °C
	Minimum Operating Supply Voltage 2 V
	Number of Words 32K
	Number of Bits per Word 8bit

Infineon 256kbit SPI FRAM Memory 8-Pin DFN, FM25V02A-DG

Frais de livraison offerts pour toute commande de plus de 75,00 €

FRAM, Cypress Semiconductor