Microchip 32Mbit SPI Flash Memory 8-Pin WDFN, SST26VF032B-104I/MF

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Sous-total 25 unités (conditionné en tube)*

50,05 €

(TVA exclue)

60,55 €

(TVA incluse)

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Prix par unité
25 - 952,002 €
100 +1,93 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
869-6182P
Référence fabricant:
SST26VF032B-104I/MF
Fabricant:
Microchip
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Marque

Microchip

Memory Size

32Mbit

Interface Type

SPI

Package Type

WDFN

Pin Count

8

Organisation

4M x 8 bit

Mounting Type

Surface Mount

Cell Type

Split Gate

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

6mm

Height

0.75mm

Width

5mm

Dimensions

6 x 5 x 0.75mm

Minimum Operating Temperature

-40 °C

Automotive Standard

AEC-Q100

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Number of Words

4M

Series

SST26

Maximum Random Access Time

3ns

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory


The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip’s SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms.

Features


Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure
x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
High Speed Clock Frequency- 104 MHz Max
Burst Modes
Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)
Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical)
Flexible Erase Capability
Software Write Protection


Flash Memory, Microchip