Microchip 2MB Parallel Flash Memory 32-Pin PDIP, SST39SF020A-70-4C-PHE
- N° de stock RS:
- 823-4510
- Référence fabricant:
- SST39SF020A-70-4C-PHE
- Fabricant:
- Microchip
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- N° de stock RS:
- 823-4510
- Référence fabricant:
- SST39SF020A-70-4C-PHE
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Memory Size | 2MB | |
| Interface Type | Parallel | |
| Package Type | PDIP | |
| Pin Count | 32 | |
| Organisation | 256K x 8 bit | |
| Mounting Type | Through Hole | |
| Cell Type | Split Gate | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Block Organisation | Symmetrical | |
| Dimensions | 42.04 x 13.97 x 3.81mm | |
| Maximum Random Access Time | 70ns | |
| Maximum Operating Temperature | +70 °C | |
| Number of Bits per Word | 8bit | |
| Number of Words | 256K | |
| Minimum Operating Temperature | 0 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Memory Size 2MB | ||
Interface Type Parallel | ||
Package Type PDIP | ||
Pin Count 32 | ||
Organisation 256K x 8 bit | ||
Mounting Type Through Hole | ||
Cell Type Split Gate | ||
Minimum Operating Supply Voltage 4.5 V | ||
Maximum Operating Supply Voltage 5.5 V | ||
Block Organisation Symmetrical | ||
Dimensions 42.04 x 13.97 x 3.81mm | ||
Maximum Random Access Time 70ns | ||
Maximum Operating Temperature +70 °C | ||
Number of Bits per Word 8bit | ||
Number of Words 256K | ||
Minimum Operating Temperature 0 °C | ||
SST39SF010A/020A/040 Parallel SuperFlash® Memory
The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs.
Features
4.5-5.5V Read and Write Operations
Endurance – 100,000 cycles (typical)
Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz)
Sector-Erase Capability – Uniform 4 Kbyte sectors
Read Access Time – 55 to 70 ns
Sector-Erase Time 18 ms
Chip-Erase Time: 70 ms (typical)
Byte-Program Time – 14 μs (typical)
Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values)
Latched Address and Data
Automatic Write Timing – Internal VPP Generation
End-of-Write Detection – Toggle Bit – Data# Polling
TTL I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and Command Sets
Endurance – 100,000 cycles (typical)
Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz)
Sector-Erase Capability – Uniform 4 Kbyte sectors
Read Access Time – 55 to 70 ns
Sector-Erase Time 18 ms
Chip-Erase Time: 70 ms (typical)
Byte-Program Time – 14 μs (typical)
Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values)
Latched Address and Data
Automatic Write Timing – Internal VPP Generation
End-of-Write Detection – Toggle Bit – Data# Polling
TTL I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and Command Sets
Flash Memory, Microchip