Microchip Split Gate 8 MB SPI Flash Memory 8-Pin SOIJ, SST25VF080B-50-4C-S2AF-T
- N° de stock RS:
- 264-8833
- Référence fabricant:
- SST25VF080B-50-4C-S2AF-T
- Fabricant:
- Microchip
Sous-total (1 paquet de 5 unités)*
6,54 €
(TVA exclue)
7,915 €
(TVA incluse)
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,308 € | 6,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-8833
- Référence fabricant:
- SST25VF080B-50-4C-S2AF-T
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Memory Size | 8MB | |
| Product Type | Flash Memory | |
| Interface Type | SPI | |
| Package Type | SOIJ | |
| Pin Count | 8 | |
| Organisation | 1M x 8 | |
| Maximum Clock Frequency | 50MHz | |
| Mount Type | Surface | |
| Cell Type | Split Gate | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.3V | |
| Timing Type | Synchronous | |
| Minimum Operating Temperature | 0°C | |
| Maximum Operating Temperature | 70°C | |
| Width | 5 mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Length | 6mm | |
| Automotive Standard | No | |
| Series | SST25VF | |
| Supply Current | 15mA | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Memory Size 8MB | ||
Product Type Flash Memory | ||
Interface Type SPI | ||
Package Type SOIJ | ||
Pin Count 8 | ||
Organisation 1M x 8 | ||
Maximum Clock Frequency 50MHz | ||
Mount Type Surface | ||
Cell Type Split Gate | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.3V | ||
Timing Type Synchronous | ||
Minimum Operating Temperature 0°C | ||
Maximum Operating Temperature 70°C | ||
Width 5 mm | ||
Standards/Approvals JEDEC, RoHS | ||
Length 6mm | ||
Automotive Standard No | ||
Series SST25VF | ||
Supply Current 15mA | ||
The Microchip serial flash memory is enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS Super flash technology. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. This device significantly improve performance and reliability, while lowering power consumption.
Single Voltage Read and Write Operations– 2.7-3.6V
Supports 50 MHz SPI clock
Endurance: 100000 Cycles (typical)
Greater than 100 years Data Retention
Program & Erase Current: 30mA (max)
Active Read Current: 10 mA (typical)
Standby Current: 5 μA (typical)
Uniform 32 Kbyte & 64 Kbyte overlay blocks
Chip-Erase Time: 35 ms (typical)
All devices are RoHS compliant
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