Microchip 64Mbit SPI Flash Memory 8-Pin WDFN, SST26VF064B-104I/MF

Sous-total (1 tube de 98 unités)*

284,592 €

(TVA exclue)

344,372 €

(TVA incluse)

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Prix par unité
le tube*
98 +2,904 €284,59 €

*Prix donné à titre indicatif

N° de stock RS:
146-0301
Référence fabricant:
SST26VF064B-104I/MF
Fabricant:
Microchip
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Marque

Microchip

Memory Size

64Mbit

Interface Type

SPI

Package Type

WDFN

Pin Count

8

Organisation

8M x 8 bit

Mounting Type

Surface Mount

Cell Type

Split Gate

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

6mm

Height

0.75mm

Width

5mm

Dimensions

6 x 5 x 0.75mm

Maximum Random Access Time

3ns

Automotive Standard

AEC-Q100

Series

SST26

Number of Bits per Word

8bit

Number of Words

8M

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Pays d'origine :
TH

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory


The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip’s SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms.

Features


Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure
x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
High Speed Clock Frequency- 104 MHz Max
Burst Modes
Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)
Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical)
Flexible Erase Capability
Software Write Protection


Flash Memory, Microchip

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