Name: Microchip Split Gate 64 MB SPI Flash Memory 8-Pin WDFN
Brand: Microchip
SKU: 146-0301
Price: 3.51 EUR
Availability: BackOrder

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Sélectionner tout	Attribut	Valeur
	Marque	Microchip
	Product Type	Flash Memory
	Memory Size	64MB
	Interface Type	SPI
	Package Type	WDFN
	Pin Count	8
	Organisation	8M x 8 Bit
	Mount Type	Surface
	Maximum Clock Frequency	104MHz
	Cell Type	Split Gate
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2.7V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Standards/Approvals	No
	Width	6 mm
	Height	0.75mm
	Length	6mm
	Number of Words	8K
	Number of Bits per Word	8
	Supply Current	20mA
	Maximum Random Access Time	3ns
	Series	SST26VF064B
	Automotive Standard	AEC-Q100

	Sélectionner tout
	Marque Microchip
	Product Type Flash Memory
	Memory Size 64MB
	Interface Type SPI
	Package Type WDFN
	Pin Count 8
	Organisation 8M x 8 Bit
	Mount Type Surface
	Maximum Clock Frequency 104MHz
	Cell Type Split Gate
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2.7V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Standards/Approvals No
	Width 6 mm
	Height 0.75mm
	Length 6mm
	Number of Words 8K
	Number of Bits per Word 8
	Supply Current 20mA
	Maximum Random Access Time 3ns
	Series SST26VF064B
	Automotive Standard AEC-Q100

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory

The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) Interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O Interface that allow for low power, high performance operation in a Compact low pin-count package. The use of Microchip’s SQI™ Interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and Block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms.

Features

Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure

x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

High Speed Clock Frequency- 104 MHz Max

Burst Modes

Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)

Fast Erase Time - Sector/Block Erase: 18 MS (Typical); Chip Erase 35 MS (Typical)

Flexible Erase Capability

Software Write Protection

Microchip Split Gate 64 MB SPI Flash Memory 8-Pin WDFN

Frais de livraison offerts pour toute commande de plus de 75,00 €

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory

Features

Flash Memory, Microchip

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