Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin SOP, AS25F3128MQ-6SINTR
- N° de stock RS:
- 338-524
- Référence fabricant:
- AS25F3128MQ-6SINTR
- Fabricant:
- Alliance Memory
Sous-total (1 bobine de 2000 unités)*
2 520,00 €
(TVA exclue)
3 040,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 30 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 1,26 € | 2 520,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 338-524
- Référence fabricant:
- AS25F3128MQ-6SINTR
- Fabricant:
- Alliance Memory
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Alliance Memory | |
| Memory Size | 128Mbit | |
| Interface Type | Serial | |
| Package Type | SOP | |
| Pin Count | 8 | |
| Cell Type | NOR | |
| Sélectionner tout | ||
|---|---|---|
Marque Alliance Memory | ||
Memory Size 128Mbit | ||
Interface Type Serial | ||
Package Type SOP | ||
Pin Count 8 | ||
Cell Type NOR | ||
- Pays d'origine :
- TW
The Alliance Memory 128M-bit interface Flash memory device designed for operating on a single power supply from 2.7 to 3.6V with current consumption as low as
0.2μA at deep power down in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device with its page erase granularity is ideal for data storage as well, eliminating the need for additional data storage devices. There are 65,536 programmable pages (256-Bytes each) configured in the device and up to 256 Bytes can be programmed at a time. The groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase) allow Pages to be erased. The device has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors afford greater flexibility for applications requiring data and parameter to be stored.
0.2μA at deep power down in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device with its page erase granularity is ideal for data storage as well, eliminating the need for additional data storage devices. There are 65,536 programmable pages (256-Bytes each) configured in the device and up to 256 Bytes can be programmed at a time. The groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase) allow Pages to be erased. The device has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors afford greater flexibility for applications requiring data and parameter to be stored.
Speed 166MHz
Active read current max 4mA
Program current max 15mA
Erase current max 15mA
8p SOP package 208mils
Active read current max 4mA
Program current max 15mA
Erase current max 15mA
8p SOP package 208mils
Liens connexes
- Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin SOP, AS25F3128MQ-6SIN
- Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin WSON, AS25F3128MQ-6WINTR
- Alliance Memory NOR 128Mbit SPI Flash Memory 8-Pin SOP, AS25F1128MQ-70SIN
- Alliance Memory NOR 512Mbit Serial Flash Memory 16-Pin SOP, AS25F3512MQ-7S2INTR
- Alliance Memory NOR 256Mbit Serial Flash Memory 16-Pin SOP, AS25F3256MQ-7S2INTR
- Alliance Memory NOR 128Mbit SPI Flash Memory 8-Pin WSON, AS25F1128MQ-70WIN
- Alliance Memory NOR 64Mbit SPI Flash Memory 8-Pin 8pin SOP, AS25F364MQ-10SIN
- Alliance Memory NOR 512Mbit Serial Flash Memory 8-Pin WSON, AS25F3512MQ-7W2INTR
