Microchip, 512 kB Serial EEPROM, 50 ns 8-Pin PDIP Serial-SPI

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Sous-total (1 tube de 100 unités)*

211,20 €

(TVA exclue)

255,60 €

(TVA incluse)

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  • 300 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Prix par unité
le tube*
100 +2,112 €211,20 €

*Prix donné à titre indicatif

N° de stock RS:
178-3996
Référence fabricant:
25LC512-I/P
Fabricant:
Microchip
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Marque

Microchip

Memory Size

512kB

Product Type

Serial EEPROM

Interface Type

Serial-SPI

Package Type

PDIP

Mount Type

Through Hole

Pin Count

8

Organisation

64k x 8 Bit

Maximum Clock Frequency

20MHz

Minimum Supply Voltage

2.5V

Number of Bits per Word

8

Maximum Supply Voltage

5.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Length

9.4mm

Width

6.35 mm

Standards/Approvals

No

Maximum Random Access Time

50ns

Automotive Standard

AEC-Q100

Supply Current

10mA

Data Retention

200year

25AA512/25LC512 SPI Serial EEPROM


Microchip’s 25AA512/25LC512 family of devices are 32 Kbit SPI Serial EEPROMs available in a variety of package, temperature and power supply variants. Featured are Page, Sector and Chip Erase functions typically associated with Flash based products.

The Serial Peripheral Interface (SPI) is utilised to provide the required Clock Input (SCK), Data In (SI) and Data Out (SO) signals. The operation of these devices can be paused via a Hold pin (HOLD) which causes inputs to be ignored with the exception higher priority interrupts defined via the Chip Select (CS) pin.

Features


20 MHz maximum Clock Speed

Byte and Page-level Write Operations (5 ms maximum): No page or sector erase required

128-byte Page

Maximum Write Current: 5 mA at 5.5V, 20 MHz

Read Current: 10 mA at 5.5V, 20 MHz

Standby Current: 1μA at 2.5V (Deep power-down)

Electronic Signature for Device ID

Self-Timed Erase and Write Cycles: Page Erase (5 ms typical), Sector Erase (10 ms/sector, typical) and Bulk Erase (10 ms, typical)

Sector Write Protection (16K byte/sector): Protect none, 1/4, 1/2 or all of array

Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch Write-protect pin

Endurance: 1 Million erase/write cycles

Data Retention: >200 years

ESD Protection: >4000V

EEPROM Serial Access - Microchip


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