Microchip 24CS512T-E/OT66KVAO, 512000 bit Serial EEPROM 5-Pin SOT-23 Serial
- N° de stock RS:
- 724-724
- Référence fabricant:
- 24CS512T-E/OT66KVAO
- Fabricant:
- Microchip
Visuel non contractuel
Sous-total (1 bobine de 3000 unités)*
4 038,00 €
(TVA exclue)
4 887,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,346 € | 4 038,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 724-724
- Référence fabricant:
- 24CS512T-E/OT66KVAO
- Fabricant:
- Microchip
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | Serial EEPROM | |
| Memory Size | 512000bit | |
| Interface Type | Serial | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Clock Frequency | 3.4MHz | |
| Minimum Supply Voltage | 1.7V | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 2.9mm | |
| Standards/Approvals | RoHS | |
| Height | 1.45mm | |
| Series | 24CS512 | |
| Data Retention | 200year | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type Serial EEPROM | ||
Memory Size 512000bit | ||
Interface Type Serial | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 5 | ||
Maximum Clock Frequency 3.4MHz | ||
Minimum Supply Voltage 1.7V | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 2.9mm | ||
Standards/Approvals RoHS | ||
Height 1.45mm | ||
Series 24CS512 | ||
Data Retention 200year | ||
Automotive Standard AEC-Q100 | ||
- Pays d'origine :
- TH
The Microchip 512 Kbit EEPROM is a Compact non-volatile memory device designed for reliable data storage in embedded and industrial applications. it supports high-speed communication up to 3.4 mhz, enabling fast data access and efficient system performance. the device features a self-timed write cycle for simplified control and integrates noise-reduction enhancements to ensure stable operation in electrically demanding environments.
Supports 256 kbit non volatile memory capacity
Supports high-speed mode operation up to 3.4 mhz
Includes self-timed internal write cycle
Offers output slope control to reduce ground bounce
Integrates schmitt trigger inputs for improved noise immunity
Liens connexes
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