Nexperia PBSS4350X,115 Transistor, 3 A NPN, 50 V, 4-Pin UPAK
- N° de stock RS:
- 518-1687
- Référence fabricant:
- PBSS4350X,115
- Fabricant:
- Nexperia
Actuellement indisponible
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Produit de remplacement
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L'unité (sur une bobine de 2500)
450,00 €
(TVA exclue)
544,50 €
(TVA incluse)
- N° de stock RS:
- 518-1687
- Référence fabricant:
- PBSS4350X,115
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 3A | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Power Dissipation Pd | 1.6W | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 1.5mm | |
| Standards/Approvals | RoHS | |
| Width | 4.25mm | |
| Series | PBSS4350X | |
| Length | 4.6mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 3A | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 50V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Power Dissipation Pd 1.6W | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 1.5mm | ||
Standards/Approvals RoHS | ||
Width 4.25mm | ||
Series PBSS4350X | ||
Length 4.6mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.