STMicroelectronics 2STR2160 Bipolar Transistor, -2 A PNP, -60 V, 3-Pin SOT-23
- N° de stock RS:
- 188-8464
- Référence fabricant:
- 2STR2160
- Fabricant:
- STMicroelectronics
Sous-total (1 paquet de 25 unités)*
3,175 €
(TVA exclue)
3,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 26 475 unité(s) expédiée(s) à partir du 04 mai 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 + | 0,127 € | 3,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8464
- Référence fabricant:
- 2STR2160
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | -2A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -60V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Minimum DC Current Gain hFE | 45 | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | PNP | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc -2A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -60V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Minimum DC Current Gain hFE 45 | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity PNP | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface mounting circuits
Applications
LED
Battery charger
Motor and relay driver
Voltage regulation
Liens connexes
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