STMicroelectronics Bipolar Transistor, -10 A PNP, -50 V, 4-Pin SOT-89
- N° de stock RS:
- 188-8437P
- Référence fabricant:
- 2STF2550
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total 250 unités (conditionné en bobine)*
68,75 €
(TVA exclue)
83,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 250 - 1225 | 0,275 € |
| 1250 - 2475 | 0,21 € |
| 2500 + | 0,188 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8437P
- Référence fabricant:
- 2STF2550
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -50V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.6mm | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -50V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Width 2.6mm | ||
Length 4.6mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new “PB-HCD” (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Very low collector-emitter saturation voltage
Fast switching speed
High current gain characteristic
Surface mounting devices in medium power SOT-89 and SOT-223 packages
Applications
Emergency lighting
LED
Motherboard and hard disk drive
Mobile equipment
Battery charger
Voltage regulation
Applications
Emergency lighting
LED
Motherboard and hard disk drive
Mobile equipment
Battery charger
Voltage regulation