STMicroelectronics Bipolar Transistor, 8 A NPN, 450 V, 3-Pin TO-220
- N° de stock RS:
- 188-8269
- Référence fabricant:
- BUL1102EFP
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
46,95 €
(TVA exclue)
56,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 600 unité(s) expédiée(s) à partir du 14 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 450 | 0,939 € | 46,95 € |
| 500 - 1200 | 0,915 € | 45,75 € |
| 1250 + | 0,892 € | 44,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8269
- Référence fabricant:
- BUL1102EFP
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 8A | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 12 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 12V | |
| Maximum Power Dissipation Pd | 70W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.6mm | |
| Length | 10.4mm | |
| Series | BUL1102E | |
| Height | 30.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 8A | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 12 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 12V | ||
Maximum Power Dissipation Pd 70W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.6mm | ||
Length 10.4mm | ||
Series BUL1102E | ||
Height 30.6mm | ||
Automotive Standard No | ||
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration
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