onsemi NSS40200LT1G Digital Transistor, -40 V PNP Surface SOT-23, 3-Pin
- N° de stock RS:
- 186-8585
- Référence fabricant:
- NSS40200LT1G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
12,875 €
(TVA exclue)
15,575 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 825 unité(s) expédiée(s) à partir du 07 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 75 | 0,515 € | 12,88 € |
| 100 - 225 | 0,444 € | 11,10 € |
| 250 - 475 | 0,386 € | 9,65 € |
| 500 - 975 | 0,338 € | 8,45 € |
| 1000 + | 0,309 € | 7,73 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-8585
- Référence fabricant:
- NSS40200LT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-23 | |
| Maximum Collector Emitter Voltage Vceo | -40V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -40V | |
| Maximum Power Dissipation Pd | 540mW | |
| Minimum DC Current Gain hFE | 250 | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 7V dc | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 1.1mm | |
| Series | e2PowerEdge | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-23 | ||
Maximum Collector Emitter Voltage Vceo -40V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -40V | ||
Maximum Power Dissipation Pd 540mW | ||
Minimum DC Current Gain hFE 250 | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 7V dc | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 1.1mm | ||
Series e2PowerEdge | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
Benefits
Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
Applications
Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
