onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin
- N° de stock RS:
- 186-7406
- Référence fabricant:
- MJB45H11T4G
- Fabricant:
- onsemi
Sous-total (1 bobine de 800 unités)*
435,20 €
(TVA exclue)
526,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 + | 0,544 € | 435,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-7406
- Référence fabricant:
- MJB45H11T4G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | PNP | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Width | 15.88mm | |
| Length | 10.29mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity PNP | ||
Pin Count 2 | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Width 15.88mm | ||
Length 10.29mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available
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