onsemi Transistor, 10 A NPN, 400 V, 3-Pin TO-220
- N° de stock RS:
- 186-7374
- Référence fabricant:
- BUL45D2G
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 186-7374
- Référence fabricant:
- BUL45D2G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 400V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 700V dc | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Emitter Base Voltage VEBO | 12V dc | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 7 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.53mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 400V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 700V dc | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Emitter Base Voltage VEBO 12V dc | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 7 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.53mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
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