onsemi Digital Transistor, 50 V NPN Surface, 3-Pin
- N° de stock RS:
- 186-7186
- Référence fabricant:
- MUN5214T1G
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
93,00 €
(TVA exclue)
114,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 6 000 unité(s) expédiée(s) à partir du 23 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,031 € | 93,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-7186
- Référence fabricant:
- MUN5214T1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Power Dissipation Pd | 310mW | |
| Minimum DC Current Gain hFE | 80 | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | MUN5214 | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Power Dissipation Pd 310mW | ||
Minimum DC Current Gain hFE 80 | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series MUN5214 | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two resistors, a series base resistor and abase−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRTcan reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
These Devices are PbFree, Halogen Free/BFR Free
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