onsemi Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- N° de stock RS:
- 184-4309
- Référence fabricant:
- MJB44H11G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
43,55 €
(TVA exclue)
52,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 100 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 200 | 0,871 € | 43,55 € |
| 250 - 450 | 0,726 € | 36,30 € |
| 500 + | 0,708 € | 35,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-4309
- Référence fabricant:
- MJB44H11G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 11.05mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 50W | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 1MHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 11.05mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
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