onsemi NSS60601MZ4T1G Transistor, 6 A NPN, 60 V, 4-Pin SOT-223
- N° de stock RS:
- 184-1178
- Référence fabricant:
- NSS60601MZ4T1G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
14,225 €
(TVA exclue)
17,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 02 août 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 75 | 0,569 € | 14,23 € |
| 100 - 225 | 0,49 € | 12,25 € |
| 250 + | 0,425 € | 10,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-1178
- Référence fabricant:
- NSS60601MZ4T1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 6A | |
| Maximum Collector Emitter Voltage Vceo | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V | |
| Minimum DC Current Gain hFE | 50 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 800mW | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Height | 1.75mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 6A | ||
Maximum Collector Emitter Voltage Vceo 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V | ||
Minimum DC Current Gain hFE 50 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 800mW | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Height 1.75mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
The combination of low saturation voltage and high gain makes this Bipolar Transistor an Ideal device for high speed switching applications where power saving is a concern.
Low Collector-Emitter Saturation Voltage
High DC Current Gain
High Current-Gain Bandwidth Product
Superior gain linearity
These Devices are PbFree, Halogen Free/BFR Free
Minimized power loss
Very low current requirements
Ideal for high frequency designs
Minimal distortion
Applications:
Linear voltage regulation
Power management for portable devices
Switching regulator
Inductive load driver (e.g. motors, fans, relays)
Linear controls
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