onsemi Transistor, 30 A NPN, 250 V, 3-Pin TO-218
- N° de stock RS:
- 184-0973
- Référence fabricant:
- MJH11020G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
114,96 €
(TVA exclue)
139,11 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 3,832 € | 114,96 € |
| 120 - 480 | 3,288 € | 98,64 € |
| 510 - 990 | 2,924 € | 87,72 € |
| 1020 + | 2,809 € | 84,27 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-0973
- Référence fabricant:
- MJH11020G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 30A | |
| Maximum Collector Emitter Voltage Vceo | 250V | |
| Package Type | TO-218 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 200V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Power Dissipation Pd | 150W | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 16.26mm | |
| Height | 33.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 30A | ||
Maximum Collector Emitter Voltage Vceo 250V | ||
Package Type TO-218 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 200V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Power Dissipation Pd 150W | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 16.26mm | ||
Height 33.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications.
High DC Current Gain @ 10 Adc -
hFE = 400 Min (All Types)
Collector-Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) MJH11018, 17
VCEO(sus) = 200 Vdc (Min) - MJH11020, 19
VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
VCE(sat) = 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
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