onsemi MMBT5550LT1G NPN High Voltage Transistor, 600 mA NPN, 140 V dc, 3-Pin SOT-23
- N° de stock RS:
- 765-318
- Référence fabricant:
- MMBT5550LT1G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 200 unités)*
2,80 €
(TVA exclue)
3,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 septembre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 200 - 1800 | 0,014 € | 2,80 € |
| 2000 - 4800 | 0,014 € | 2,80 € |
| 5000 - 19800 | 0,013 € | 2,60 € |
| 20000 + | 0,012 € | 2,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 765-318
- Référence fabricant:
- MMBT5550LT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | NPN High Voltage Transistor | |
| Maximum DC Collector Current Idc | 600mA | |
| Maximum Collector Emitter Voltage Vceo | 140V dc | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 160V dc | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 6V dc | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 1.01mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 1.4mm | |
| Series | MMBT5550L | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type NPN High Voltage Transistor | ||
Maximum DC Collector Current Idc 600mA | ||
Maximum Collector Emitter Voltage Vceo 140V dc | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 160V dc | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 6V dc | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 1.01mm | ||
Standards/Approvals RoHS Compliant | ||
Width 1.4mm | ||
Series MMBT5550L | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The onsemi NPN silicon transistor designed for applications requiring high voltage capabilities. With an impressive collector-emitter voltage rating of 140V, this device is engineered for optimum reliability in automotive and other industrial applications demanding stringent performance standards. Its Pb-free and halogen-free construction further reflects its compatibility with contemporary environmental regulations, ensuring compliance without compromising quality. Optimized for continuous collector currents of up to 600mA, this transistor excels in high-speed switching operations, offering minimal delays and enhanced efficiency for various electronic circuits.
High voltage capability with collector-emitter voltage ratings up to 140V
Designed for a continuous collector current of 600mA, supporting demanding applications
Pb-free and halogen-free construction complies with RoHS standards, promoting environmental safety
AEC-Q101 qualified, ensuring reliability in automotive and critical applications
Optimised for fast switching speeds, facilitating efficient circuit operation
Low collector-emitter saturation voltage, enhancing overall energy efficiency
Enhanced thermal stability with low thermal resistance, improving performance in high-temperature environments
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