onsemi BC818-40LT1G General Purpose Transistor, 500 mA NPN, 25 V, 3-Pin SOT-23
- N° de stock RS:
- 765-312
- Référence fabricant:
- BC818-40LT1G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 200 unités)*
3,00 €
(TVA exclue)
3,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 200 - 1800 | 0,015 € | 3,00 € |
| 2000 - 4800 | 0,015 € | 3,00 € |
| 5000 - 19800 | 0,014 € | 2,80 € |
| 20000 + | 0,013 € | 2,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 765-312
- Référence fabricant:
- BC818-40LT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | General Purpose Transistor | |
| Maximum DC Collector Current Idc | 500mA | |
| Maximum Collector Emitter Voltage Vceo | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Silicon Transistor | |
| Maximum Collector Base Voltage VCBO | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 250 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 2.9mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 1.3mm | |
| Series | BC818-40L | |
| Height | 1.11mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type General Purpose Transistor | ||
Maximum DC Collector Current Idc 500mA | ||
Maximum Collector Emitter Voltage Vceo 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Silicon Transistor | ||
Maximum Collector Base Voltage VCBO 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 250 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 2.9mm | ||
Standards/Approvals RoHS Compliant | ||
Width 1.3mm | ||
Series BC818-40L | ||
Height 1.11mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The onsemi Transistor is designed for general-purpose applications, providing an efficient solution for a myriad of electronic circuits. This NPN silicon transistor ensures robust performance with a collector current rating of up to 500 mA and voltage ratings of 25 V and 30 V for collector-emitter and collector-base, respectively. Qualified under AEC-Q101, it meets automotive and other stringent control requirements, ensuring reliability and performance in varied conditions. Built with sustainability in mind, it is Pb-free and complies with RoHS standards, catering to eco-conscious designs while delivering exceptional functionality.
AEC-Q101 qualified and PPAP capable, ensuring automotive-grade reliability
Pb-free, halogen-free, and RoHS compliant, promoting environmentally friendly designs
High collector current capability of 500 mA, suitable for diverse applications
Maximum collector-emitter voltage of 25 V optimised for robust circuit performance
Emitter-base voltage rating of 5.0 V, providing additional design flexibility
SOT-23 package style, allowing for Compact integration in space-constrained applications
Efficient thermal resistance characteristics, supporting extended operational temperature ranges
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