Nexperia PBSS9110X,135 Transistor, -1 A PNP, -100 V, 4-Pin UPAK
- N° de stock RS:
- 485-280
- Référence fabricant:
- PBSS9110X,135
- Fabricant:
- Nexperia
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 485-280
- Référence fabricant:
- PBSS9110X,135
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 125 | |
| Maximum Power Dissipation Pd | 2W | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | PBSS9110X | |
| Width | 2.5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 120V | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 125 | ||
Maximum Power Dissipation Pd 2W | ||
Transistor Polarity PNP | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series PBSS9110X | ||
Width 2.5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 4.5mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.