- N° de stock RS:
- 231-8073
- Référence fabricant:
- QH12TZ600Q
- Fabricant:
- Power Integrations
900 En stock pour livraison sous 1 jour(s)
Ajouté
Prix L'unité (dans un tube de 50)
1,322 €
(TVA exclue)
1,60 €
(TVA incluse)
Unité | Prix par unité | le tube* |
50 - 450 | 1,322 € | 66,10 € |
500 - 950 | 1,288 € | 64,40 € |
1000 + | 1,257 € | 62,85 € |
*prix conseillé |
- N° de stock RS:
- 231-8073
- Référence fabricant:
- QH12TZ600Q
- Fabricant:
- Power Integrations
Documentation technique
Législations et de normes
Détails du produit
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
Output rectifier of on-board charger
Spécifications
Attribut | Valeur |
---|---|
Diode Configuration | Single |
Maximum Forward Current | 12A |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Maximum Reverse Voltage | 600V |
Package Type | TO-220AC |
Diode Technology | SiC Schottky |
Pin Count | 2 |
- N° de stock RS:
- 231-8073
- Référence fabricant:
- QH12TZ600Q
- Fabricant:
- Power Integrations