Toshiba 650V 8A, Schottky Diode, 2-Pin TO-220 TRS8E65C,S1AQ(S
- N° de stock RS:
- 896-2612
- Référence fabricant:
- TRS8E65C,S1AQ(S
- Fabricant:
- Toshiba
Produit discontinué
- N° de stock RS:
- 896-2612
- Référence fabricant:
- TRS8E65C,S1AQ(S
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
- Pays d'origine :
- CN
Détails du produit
Silicon Carbide (SiC) Schottky Diode, Toshiba
A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high speed switching applications.
Low-loss and high-efficiency power conversion
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Diodes and Rectifiers, Toshiba
Spécifications
Attribut | Valeur |
|---|---|
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Maximum Continuous Forward Current | 8A |
| Peak Reverse Repetitive Voltage | 650V |
| Diode Configuration | Single |
| Diode Type | Schottky |
| Pin Count | 2 |
| Maximum Forward Voltage Drop | 1.7V |
| Number of Elements per Chip | 1 |
| Diode Technology | SiC Schottky |
| Peak Non-Repetitive Forward Surge Current | 40A |
- N° de stock RS:
- 896-2612
- Référence fabricant:
- TRS8E65C,S1AQ(S
- Fabricant:
- Toshiba