- N° de stock RS:
- 194-9078
- Référence fabricant:
- CY14B104NA-BA45XI
- Fabricant:
- Cypress Semiconductor
Produit discontinué
- N° de stock RS:
- 194-9078
- Référence fabricant:
- CY14B104NA-BA45XI
- Fabricant:
- Cypress Semiconductor
Documentation technique
Législations et de normes
- Pays d'origine :
- TH
Détails du produit
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
Spécifications
Attribut | Valeur |
---|---|
Memory Size | 4Mbit |
Organisation | 256K x 16 bit |
Interface Type | Parallel |
Data Bus Width | 16bit |
Maximum Random Access Time | 45ns |
Mounting Type | Surface Mount |
Package Type | FBGA |
Pin Count | 48 |
Dimensions | 10 x 6 x 0.21mm |
Length | 10mm |
Width | 6mm |
Height | 0.21mm |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +85 °C |
Number of Words | 256K |
Minimum Operating Temperature | -40 °C |
Minimum Operating Supply Voltage | 2.7 V |
Number of Bits per Word | 16bit |
- N° de stock RS:
- 194-9078
- Référence fabricant:
- CY14B104NA-BA45XI
- Fabricant:
- Cypress Semiconductor