Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole
- N° de stock RS:
- 891-2746
- Référence fabricant:
- GT40WR21,Q(O
- Fabricant:
- Toshiba
Produit discontinué
- N° de stock RS:
- 891-2746
- Référence fabricant:
- GT40WR21,Q(O
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
- Pays d'origine :
- JP
Détails du produit
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 1800 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1.8MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | 175 °C |
| Gate Capacitance | 4500pF |
- N° de stock RS:
- 891-2746
- Référence fabricant:
- GT40WR21,Q(O
- Fabricant:
- Toshiba