- N° de stock RS:
- 862-9359
- Référence fabricant:
- ISL9V3040P3
- Fabricant:
- Fairchild Semiconductor
Fonctionnalité momentanément indisponible, veuillez nous contacter
Ajouté
Prix L'unité (en paquet de 5)
3,218 €
(TVA exclue)
3,894 €
(TVA incluse)
Unité | Prix par unité | le paquet* |
5 - 5 | 3,218 € | 16,09 € |
10 - 95 | 2,592 € | 12,96 € |
100 - 495 | 2,128 € | 10,64 € |
500 - 995 | 1,794 € | 8,97 € |
1000 + | 1,538 € | 7,69 € |
*prix conseillé |
- N° de stock RS:
- 862-9359
- Référence fabricant:
- ISL9V3040P3
- Fabricant:
- Fairchild Semiconductor
Législations et de normes
Détails du produit
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 21 A |
Maximum Collector Emitter Voltage | 450 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 150 W |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 4.7 x 16.3mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |