onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- N° de stock RS:
- 807-8758
- Référence fabricant:
- ISL9V3040D3ST
- Fabricant:
- onsemi
25 En stock, livraison sous 1 jour(s) (stock Europe)
25 En stock, livraison sous 3 à 5 jours (stock Europe)
Ajouté
Prix L'unité (en paquet de 5)
1,996 €
(TVA exclue)
2,415 €
(TVA incluse)
| Unité | Prix par unité | le paquet* |
| 5 - 5 | 1,996 € | 9,98 € |
| 10 - 95 | 1,682 € | 8,41 € |
| 100 - 245 | 1,27 € | 6,35 € |
| 250 - 495 | 1,232 € | 6,16 € |
| 500 + | 1,076 € | 5,38 € |
| *prix conseillé | ||
- N° de stock RS:
- 807-8758
- Référence fabricant:
- ISL9V3040D3ST
- Fabricant:
- onsemi
Législations et de normes
Détails du produit
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 21 A |
| Maximum Collector Emitter Voltage | 300 V |
| Maximum Gate Emitter Voltage | ±10V |
| Maximum Power Dissipation | 150 W |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 6.73 x 6.22 x 2.39mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |