onsemi NGTG12N60TF1G IGBT, 88 (Pulse) A 600 V, 3-Pin TO-3PF, Through Hole
- N° de stock RS:
- 801-6801
- Référence fabricant:
- NGTG12N60TF1G
- Fabricant:
- ON Semiconductor
Produit discontinué
- N° de stock RS:
- 801-6801
- Référence fabricant:
- NGTG12N60TF1G
- Fabricant:
- ON Semiconductor
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 88 (Pulse) A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 54 W |
| Package Type | TO-3PF |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 5.5 x 26.5mm |
| Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 801-6801
- Référence fabricant:
- NGTG12N60TF1G
- Fabricant:
- ON Semiconductor