- N° de stock RS:
- 796-5058
- Référence fabricant:
- GT30J121
- Fabricant:
- Toshiba
Fonctionnalité momentanément indisponible, veuillez nous contacter
Ajouté
Prix la pièce
3,60 €
(TVA exclue)
4,36 €
(TVA incluse)
Unité | Prix par unité |
1 - 24 | 3,60 € |
25 - 49 | 3,42 € |
50 - 199 | 3,22 € |
200 - 399 | 2,88 € |
400 + | 2,69 € |
- N° de stock RS:
- 796-5058
- Référence fabricant:
- GT30J121
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 170 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.9 x 4.8 x 20mm |
Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 796-5058
- Référence fabricant:
- GT30J121
- Fabricant:
- Toshiba