Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole
- N° de stock RS:
- 796-5055
- Référence fabricant:
- GT20J341
- Fabricant:
- Toshiba
166 En stock pour livraison sous 1 jour(s)
Ajouté
Prix la pièce
2,25 €
(TVA exclue)
2,72 €
(TVA incluse)
| Unité | Prix par unité |
| 1 - 4 | 2,25 € |
| 5 - 9 | 2,12 € |
| 10 - 24 | 2,00 € |
| 25 - 49 | 1,88 € |
| 50 + | 1,79 € |
- N° de stock RS:
- 796-5055
- Référence fabricant:
- GT20J341
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 45 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 796-5055
- Référence fabricant:
- GT20J341
- Fabricant:
- Toshiba