- N° de stock RS:
- 771-6291
- Référence fabricant:
- 2MBi200VA-060-50
- Fabricant:
- Fuji Electric
Produit discontinué
Produit de remplacement
Ce produit n'est pas disponible actuellement. Voici notre produit de remplacement:
- N° de stock RS:
- 771-6291
- Référence fabricant:
- 2MBi200VA-060-50
- Fabricant:
- Fuji Electric
Législations et de normes
Détails du produit
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 200 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 650 W |
Package Type | M263 |
Configuration | Series |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 94 x 34 x 30mm |
Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 771-6291
- Référence fabricant:
- 2MBi200VA-060-50
- Fabricant:
- Fuji Electric