- N° de stock RS:
- 168-7767
- Référence fabricant:
- GT50JR21
- Fabricant:
- Toshiba
En cours d'approvisionnement - expédition le 17/10/2024, livraison sous 4 jour(s)
Ajouté
Prix L'unité (dans un tube de 25)
4,143 €
(TVA exclue)
5,013 €
(TVA incluse)
Unité | Prix par unité | le tube* |
25 + | 4,143 € | 103,575 € |
*prix conseillé |
- N° de stock RS:
- 168-7767
- Référence fabricant:
- GT50JR21
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
- Pays d'origine :
- JP
Détails du produit
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 230 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.5 x 4.5 x 20mm |
Maximum Operating Temperature | +175 °C |
- N° de stock RS:
- 168-7767
- Référence fabricant:
- GT50JR21
- Fabricant:
- Toshiba