STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
- N° de stock RS:
- 168-7156
- Référence fabricant:
- STGB10NC60HDT4
- Fabricant:
- STMicroelectronics
En cours d'approvisionnement - expédition le 18/11/2024, livraison sous 4 jour(s)
Ajouté
Prix L'unité (sur une bobine de 1000)
0,818 €
(TVA exclue)
0,99 €
(TVA incluse)
| Unité | Prix par unité | la bobine* |
| 1000 + | 0,818 € | 818,00 € |
| *prix conseillé | ||
- N° de stock RS:
- 168-7156
- Référence fabricant:
- STGB10NC60HDT4
- Fabricant:
- STMicroelectronics
Législations et de normes
- Pays d'origine :
- CN
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 65 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 9.35 x 4.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |